دیتاشیت WPM2081-3/TR
مشخصات دیتاشیت
| نام دیتاشیت |
WPM2081-3/TR
|
| حجم فایل |
53.532
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
WILLSEMI(Will Semicon) WPM2081-3/TR
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
660mW
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Total Gate Charge (Qg@Vgs):
10nC@4.5V
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Drain Source Voltage (Vdss):
20V
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Input Capacitance (Ciss@Vds):
1.062nF@6V
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Continuous Drain Current (Id):
2.9A
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Gate Threshold Voltage (Vgs(th)@Id):
650mV@250uA
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Reverse Transfer Capacitance (Crss@Vds):
124pF@6V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
43mΩ@4.5V,3.2A
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Package:
SOT-23
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Manufacturer:
WILLSEMI(Will Semicon)
